PART |
Description |
Maker |
2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
2SC4616 |
Large current calcity (IC=2A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
SBF13005 |
30W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces High Voltage Fast-Switching NPN Power Transistor
|
SemiWell Semiconductor
|
2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
2SC2946 |
High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V
|
TY Semiconductor Co., Ltd
|
2SC4116 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
|
TY Semiconductor Co., Ltd
|
2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
KTC4372 |
High Voltage: VCEO=150V
|
TY Semiconductor Co., L...
|
APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装(Vcbo00V,Vceo00V,Vebo6V的)(不适用沟道增强型,高电压功率马鞍山场效应管(Vcbo00V,Vceo00V,Vebo6V的)
|
SemeLAB SEME-LAB[Seme LAB] Motorola Mobility Holdings, Inc.
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|